
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | KSC1675RBU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Frequency - Transition | 300 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 |
| Power - Max [Max] | 250 mW |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
| Part | Mounting Type | Transistor Type | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Package / Case | Current - Collector Cutoff (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | Through Hole | NPN | TO-92-3 | 50 mA | 30 V | 250 mW | 300 MHz | 120 | 300 mV | TO-226-3 TO-92-3 | 100 nA |
ON Semiconductor | Through Hole | NPN | TO-92-3 | 50 mA | 30 V | 250 mW | 300 MHz | 40 | 300 mV | TO-226-3 TO-92-3 | 100 nA |
ON Semiconductor | Through Hole | NPN | TO-92-3 | 50 mA | 30 V | 250 mW | 300 MHz | 120 | 300 mV | TO-226-3 TO-92-3 | 100 nA |
ON Semiconductor | Through Hole | NPN | TO-92-3 | 50 mA | 30 V | 250 mW | 300 MHz | 40 | 300 mV | TO-226-3 TO-92-3 | 100 nA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 11539 | $ 0.03 | |
| 11539 | $ 0.03 | |||
Description
General part information
KSC1675 Series
Bipolar (BJT) Transistor NPN 30 V 50 mA 300MHz 250 mW Through Hole TO-92-3
Documents
Technical documentation and resources
No documents available