Discrete Semiconductor Products
RGTV80TS65DGC13
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGTV80TS65DGC13
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTV80TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 78 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 234 W |
| Reverse Recovery Time (trr) | 101 ns |
| Supplier Device Package | TO-247GE |
| Switching Energy | 1.02 mJ, 710 µJ |
| Td (on/off) @ 25°C [Max] | 113 ns |
| Td (on/off) @ 25°C [Min] | 39 ns |
| Test Condition | 400 V, 10 Ohm, 15 V, 40 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGTV80TS65D Series
RGTV80TS65D is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications. The RGTV series is a product that has a good balance between low switching loss and high speed switching while guaranteeing 2μs SCSOA.
Documents
Technical documentation and resources