
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | DTD133HKT146 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 200 mW |
| Resistor - Base (R1) | 3.3 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | SMT3 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DTD133 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SMT3
Documents
Technical documentation and resources