Discrete Semiconductor Products

BYT54M-TAP

Active

DIODE AVALANCHE 1KV 1.25A SOD57

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE AVALANCHE 1KV 1.25A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BYT54M-TAP

Current - Average Rectified (Io)	1.25 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-57, Axial
Speed	200 mA, 500 ns
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V

Part	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology
Vishay General Semiconductor - Diodes Division BYT54M-TAP	1.25 A	Through Hole	1000 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche
Vishay General Semiconductor - Diodes Division BYT54J-TAP	1.25 A	Through Hole	600 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche
Vishay General Semiconductor - Diodes Division BYT54G-TAP	1.25 A	Through Hole	400 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche
Vishay General Semiconductor - Diodes Division BYT54K-TR	1.25 A	Through Hole	800 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche
Vishay General Semiconductor - Diodes Division BYT54A-TR	1.25 A	Through Hole	50 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche
Vishay General Semiconductor - Diodes Division BYT54J-TR	1.25 A	Through Hole	600 V	175 ░C	-55 C	Axial SOD-57	200 mA 500 ns	5 µA	SOD-57	Avalanche

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1.25A Through Hole SOD-57

Technical documentation and resources