Discrete Semiconductor Products

PJA3470_R1_00001

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MOSFETS 100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 100V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3470_R1_00001

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC
Input Capacitance (Ciss) (Max) @ Vds	508 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package
Panjit International Inc. PJA3470_R1_00001	1.3 A	4.5 V 10 V	2.5 V	9.1 nC	1.2 W	508 pF	150 °C	-55 °C	20 V	N-Channel	SC-59 SOT-23-3 TO-236-3	Surface Mount	320 mOhm	100 V	MOSFET (Metal Oxide)	SOT-23

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General part information

N-Channel 100 V 1.3A (Ta) 1.2W (Ta) Surface Mount SOT-23

Technical documentation and resources