Specification	NTR4502PT1

Current - Continuous Drain (Id) @ 25°C	1.13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	400 mW
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTR4502P Series

Single P-Channel Power MOSFET -30V -1.95A 200mΩ

Part	Technology	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTR4502PT1	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	3 V	4.5 V 10 V	400 mW	Surface Mount	P-Channel	-55 °C	150 °C	30 V	SOT-23-3 (TO-236)	200 pF	10 nC	20 V	200 mOhm	1.13 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 30 V P-Channel Power MOSFET.

Technical documentation and resources