RJK5030DPP-M0#T2

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NCH POWER MOSFET 500V 5A 1600MOHM TO-220F

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NCH POWER MOSFET 500V 5A 1600MOHM TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	RJK5030DPP-M0#T2

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	28.5 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-220FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Power MOSFET 500V 5A 1600mohm TO-220F

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case
Renesas Electronics Corporation RJK5030DPP-M0#T2	5 A	TO-220FL	N-Channel	500 V	550 pF	30 V	28.5 W	10 V	MOSFET (Metal Oxide)	13 nC	150 °C	1.6 Ohm	Through Hole	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources