Discrete Semiconductor Products

AOT262L

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MOSFET N-CH 60V 20A/140A TO220

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Discrete Semiconductor Products

Active

MOSFET N-CH 60V 20A/140A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT262L

Current - Continuous Drain (Id) @ 25°C	20 A, 140 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	115 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	333 W, 2.1 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case
Alpha & Omega Semiconductor Inc. AOT262L	3 mOhm	115 nC	TO-220	N-Channel	20 V	6 V 10 V	Through Hole	175 °C	-55 °C	9800 pF	MOSFET (Metal Oxide)	3.2 V	20 A 140 A	2.1 W 333 W	60 V	TO-220-3

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