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Technical Specifications

Parameters and characteristics for this part

SpecificationUCC21756QDWRQ1
Approval AgencyUL, VDE
Common Mode Transient Immunity (Min) [Min]150 kV/µs
Current - Output High, Low [custom]10 A
Current - Output High, Low [custom]10 A
Current - Peak Output10 A
GradeAutomotive
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Propagation Delay tpLH / tpHL (Max) [Max]130 ns
Pulse Width Distortion (Max) [Max]30 ns
QualificationAEC-Q100
Rise / Fall Time (Typ) [custom]27 ns
Rise / Fall Time (Typ) [custom]33 ns
Supplier Device Package16-SOIC
TechnologyCapacitive Coupling
Voltage - Isolation5700 Vrms
Voltage - Output Supply [Max]33 V
Voltage - Output Supply [Min]13 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.87
10$ 6.21
25$ 5.92
100$ 5.14
250$ 4.91
500$ 4.48
1000$ 3.90
Digi-Reel® 1$ 6.87
10$ 6.21
25$ 5.92
100$ 5.14
250$ 4.91
500$ 4.48
1000$ 3.90
Tape & Reel (TR) 2000$ 3.76
Texas InstrumentsLARGE T&R 1$ 5.26
100$ 4.29
250$ 3.37
1000$ 2.86

Description

General part information

UCC21756-Q1 Series

The UCC21756-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21756-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.