Discrete Semiconductor Products

VS-60EPU06L-N3

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DIODE GEN PURP 600V 60A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60EPU06L-N3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	50 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	81 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.68 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-60EPU06P-S1	200 mA 500 ns	1.68 V	Through Hole	81 ns	TO-247AC	Standard	60 A	600 V	175 ░C	-55 C	TO-247-3	50 µA
Vishay General Semiconductor - Diodes Division VS-60EPU06HN3	200 mA 500 ns	1.68 V	Through Hole	81 ns	TO-247AC Modified	Standard	60 A	600 V	175 ░C	-55 C	TO-247-2	50 µA	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division VS-60EPU06L-N3	200 mA 500 ns	1.68 V	Through Hole	81 ns	TO-247AD	Standard	60 A	600 V	175 ░C	-55 C	TO-247-2	50 µA	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 60A Through Hole TO-247AD

Technical documentation and resources