Discrete Semiconductor Products

CMS55N06CT-HF

Obsolete

MOSFET N-CH 60V 55A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 55A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	CMS55N06CT-HF

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2 W, 96 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Comchip Technology CMS55N06CT-HF	2 W 96 W	12 mOhm	TO-220-3	20 V	Through Hole	2.5 V	N-Channel	60 V	MOSFET (Metal Oxide)	4.5 V 10 V	TO-220AB	150 °C	-55 °C	2100 pF	55 A	39.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.84

General part information

N-Channel 60 V 55A (Tc) 2W (Ta), 96W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available