Specification	ATP103-TL-H

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2430 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ATP103 Series

P-Channel Power MOSFET, -30V, -55A, 13mΩ

Part	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	FET Type	Vgs (Max)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor ATP103-TL-H	13 mOhm	ATPAK (2 leads+tab)	50 W	P-Channel	20 V	150 °C	4.5 V 10 V	Surface Mount	30 V	2430 pF	MOSFET (Metal Oxide)	ATPAK	55 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ATP103 is P-Channel Power MOSFET, -30V, -55A, 13mOhm, Single ATPAK for General-Purpose Switching Device Application.