Specification	RHRG3060CC

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	250 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-3
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

RHRG3060CC Series

60A, 600V, Hyperfast Dual Diode

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Speed	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
ON Semiconductor RHRG3060CC	175 ░C	-65 C	1 Pair Common Cathode	30 A	Avalanche	250 µA	600 V	TO-247-3	TO-247-3	200 mA 500 ns	45 ns	Through Hole	2.1 V
ON Semiconductor RHRG3060	175 ░C	-65 C			Avalanche	250 µA	600 V	TO-247-2	TO-247-2	200 mA 500 ns	45 ns	Through Hole	2.1 V	30 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

RHRG3060CC Series

The RHRG3060CC is a hyperfast dual diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.