Discrete Semiconductor Products

BUK7Y53-100B,115

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y53-100B,115

Current - Continuous Drain (Id) @ 25°C	24.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1467 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	85 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Qualification	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package
Freescale Semiconductor - NXP BUK7Y53-100B,115	MOSFET (Metal Oxide)	20 V	1467 pF	22 nC	10 V	Automotive	SC-100 SOT-669	-55 °C	175 ░C	85 W	53 mOhm	100 V	AEC-Q101	N-Channel	24.8 A	Surface Mount	LFPAK56 Power-SO8

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General part information

N-Channel 100 V 24.8A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources