Discrete Semiconductor Products

IXFX180N25T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

IXFX180N25T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-247AD/ TUBE

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX180N25T

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	345 nC
Input Capacitance (Ciss) (Max) @ Vds	28000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1390 W
Rds On (Max) @ Id, Vgs	12.9 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFX180N25T Series

DiscMSFT NChTrenchGate-Gen1 TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Package / Case
Littelfuse/Commercial Vehicle Products IXFX180N25T	10 V	-55 °C	150 °C	N-Channel	180 A	345 nC	12.9 mOhm	28000 pF	PLUS247™-3	250 V	20 V	Through Hole	5 V	1390 W	MOSFET (Metal Oxide)	TO-247-3 Variant

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 20.15
		30	$ 12.66
		120	$ 11.32
Newark	Each	250	$ 12.77
		500	$ 11.86

Description

General part information

IXFX180N25T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources

No documents available