Discrete Semiconductor Products

V10P8-M3/87A

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DIODE SCHOTTKY 80V 10A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 10A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V10P8-M3/87A

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	800 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	680 mV

Part	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Technology	Speed
Vishay General Semiconductor - Diodes Division V10P8-M3/87A	800 µA	Surface Mount	680 mV	150 °C	-40 °C	3-PowerDFN TO-277	80 V	TO-277A (SMPC)	10 A	Schottky	200 mA 500 ns

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General part information

Diode 80 V 10A Surface Mount TO-277A (SMPC)

Technical documentation and resources