Discrete Semiconductor Products

NP110N055PUK-E1-AY

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MOSFET N-CH 55V 110A TO263

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Discrete Semiconductor Products

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MOSFET N-CH 55V 110A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	NP110N055PUK-E1-AY

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	294 nC
Input Capacitance (Ciss) (Max) @ Vds	16050 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.8 W, 348 W
Rds On (Max) @ Id, Vgs	1.75 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology
Renesas Electronics Corporation NP110N055PUK-E1-AY	10 V	1.75 mOhm	294 nC	4 V	N-Channel	20 V	TO-263	110 A	175 °C	16050 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.8 W 348 W	55 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 110A (Tc) 1.8W (Ta), 348W (Tc) Surface Mount TO-263

Technical documentation and resources