Specification	FCPF190N65FL1

Current - Continuous Drain (Id) @ 25°C	20.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	3055 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCPF190N65FL1-F154 Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead

Part	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF190N60-F154	3.5 V	TO-220-3 Full Pack	Through Hole	74 nC	-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.2 A	199 mOhm	20 V	2950 pF	600 V
ON Semiconductor FCPF190N65FL1-F154		TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.6 A	190 mOhm	20 V	3055 pF	650 V	78 nC	5 V
ON Semiconductor FCPF190N60E-F154	3.5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.6 A	190 mOhm	20 V	3175 pF	600 V	82 nC
ON Semiconductor FCPF190N60E-F152	3.5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.6 A	190 mOhm		3175 pF	600 V	82 nC
ON Semiconductor FCPF190N60-F152	3.5 V	TO-220-3 Full Pack	Through Hole	74 nC	-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.2 A	199 mOhm	20 V	2950 pF	600 V			10 V
ON Semiconductor FCPF190N65FL1	5 V	TO-220-3 Full Pack	Through Hole		-55 °C	150 °C	39 W	MOSFET (Metal Oxide)	TO-220F-3	N-Channel	20.6 A	190 mOhm	20 V	3055 pF	650 V	78 nC		10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCPF190N65FL1-F154 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.