Discrete Semiconductor Products
PBSS4260PANSX
ActiveFreescale Semiconductor - NXP
TRANS GP BJT NPN 60V 2A 960MW 6-PIN DFN-D EP T/R
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Search across all available documentation for this part.
Discrete Semiconductor Products
PBSS4260PANSX
ActiveFreescale Semiconductor - NXP
TRANS GP BJT NPN 60V 2A 960MW 6-PIN DFN-D EP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4260PANSX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 140 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power - Max [Max] | 370 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN2020D-6 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS4260PANS Series
NPN/NPN low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources