Discrete Semiconductor Products

SI7852DP-T1-E3

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MOSFET N-CH 80V 7.6A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 80V 7.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7852DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7852ADP-T1-GE3	PowerPAK® SO-8	8 V 10 V	N-Channel	80 V	45 nC	PowerPAK® SO-8	17 mOhm	1825 pF	20 V	MOSFET (Metal Oxide)	Surface Mount	4.5 V	5 W 62.5 W	-55 °C	150 °C	30 A
Vishay General Semiconductor - Diodes Division SI7852DP-T1-E3	PowerPAK® SO-8	6 V 10 V	N-Channel	80 V	41 nC	PowerPAK® SO-8	16.5 mOhm		20 V	MOSFET (Metal Oxide)	Surface Mount	2 V	1.9 W	-55 °C	150 °C	7.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources