Discrete Semiconductor Products
RX3N10BBHC16
ActiveRohm Semiconductor
MOSFET, N-CHANNEL, 80V, 225A, TO-220AB ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RX3N10BBHC16
ActiveRohm Semiconductor
MOSFET, N-CHANNEL, 80V, 225A, TO-220AB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RX3N10BBHC16 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 225 A, 105 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 185 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 11800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 189 W |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RX3N10BBH Series
RX3N10BBH is a power MOSFET with low on-resistance and high power mold package, suitable for switching, motor drives, and DC/DC converter.
Documents
Technical documentation and resources