Discrete Semiconductor Products

IRFS350A

Obsolete

MOSFET N-CH 400V 11.5A TO3PF

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 11.5A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS350A

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	131 nC
Input Capacitance (Ciss) (Max) @ Vds	2780 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
ON Semiconductor IRFS350A	TO-3P-3 Full Pack	TO-3PF	92 W	11.5 A	2780 pF	30 V	N-Channel	300 mOhm	Through Hole	MOSFET (Metal Oxide)	131 nC	-55 °C	150 °C	4 V	10 V	400 V
ON Semiconductor IRFS350A	TO-3P-3 Full Pack	TO-3PF	92 W	11.5 A	2780 pF	30 V	N-Channel	300 mOhm	Through Hole	MOSFET (Metal Oxide)	131 nC	-55 °C	150 °C	4 V	10 V	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 400 V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF

Technical documentation and resources