Discrete Semiconductor Products

FDD5614P

Obsolete

60V P-CHANNEL POWERTRENCH® MOSFET -15A, 100MΩ

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Discrete Semiconductor Products

Obsolete

60V P-CHANNEL POWERTRENCH® MOSFET -15A, 100MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDD5614P

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	759 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.8 W, 42 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

60V P-Channel PowerTrench® MOSFET -15A, 100mΩ

Part	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)
ON Semiconductor FDD5614P	MOSFET (Metal Oxide)	60 V	TO-252AA	4.5 V 10 V	3 V	100 mOhm	P-Channel	15 A	24 nC	20 V	Surface Mount	-55 °C	175 ░C	759 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.8 W 42 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This 60V P-Channel MOSFET uses a high voltage PowerTrench®process. It has been optimized for power management applications.