Specification	UPA1763G-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	57 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

UPA1763G Series

Power MOSFETs for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case	Package / Case	Vgs(th) (Max) @ Id [Max]	Configuration	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	FET Feature
Renesas Electronics Corporation UPA1763G-E2-A	4.5 A
Renesas Electronics Corporation UPA1763G-E1-AT	4.5 A	2 W	MOSFET (Metal Oxide)	870 pF	0.173 in	4.4 mm	8-SOIC	2.5 V	2 N-Channel (Dual)	8-PSOP	Surface Mount	20 nC	57 mOhm	60 V	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Nch Dual Power MOSFET 60V 4. 5A 47. 0mohm Power SOP8 Automotive

Technical documentation and resources