Discrete Semiconductor Products

UPA1763G-E1-AT

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

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Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1763G-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Power MOSFETs for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Configuration	FET Feature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation UPA1763G-E1-A	4.5 A
Renesas Electronics Corporation UPA1763G-E2-A	4.5 A
Renesas Electronics Corporation UPA1763G-E1-AT	4.5 A	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	57 mOhm	2.5 V	2 W	8-PSOP	Surface Mount	8-SOIC (0.173" 4.40mm Width)	20 nC	870 pF	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Nch Dual Power MOSFET 60V 4. 5A 47. 0mohm Power SOP8 Automotive

Technical documentation and resources