Discrete Semiconductor Products

KSP10BU

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TRANSISTOR,BJT,NPN,25V V(BR)CEO,TO-92 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

TRANSISTOR,BJT,NPN,25V V(BR)CEO,TO-92 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	KSP10BU

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	650 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

NPN Epitaxial Silicon Transistor

Part	Package / Case	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Mounting Type
ON Semiconductor KSP10BU	TO-226-3 TO-92-3	TO-92-3	650 MHz	25 V	150 °C	60	350 mW	NPN	Through Hole
ON Semiconductor KSP10BU	TO-226-3 TO-92-3	TO-92-3	650 MHz	25 V	150 °C	60	350 mW	NPN	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources