UPA2690T1R-E2-AX

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NCH/PCH DUAL POWER MOSFET 20V 4.0A 42MOHM 6PINHUSON2020

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Discrete Semiconductor Products

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NCH/PCH DUAL POWER MOSFET 20V 4.0A 42MOHM 6PINHUSON2020

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2690T1R-E2-AX

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	4 A, 3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	4.5 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WFDFN Exposed Pad
Power - Max [Max]	2.3 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)

Nch/Pch Dual Power Mosfet 20V 4.0A 42Mohm 6Pinhuson2020

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max [Max]	Operating Temperature	Technology	FET Feature	FET Feature
Renesas Electronics Corporation UPA2690T1R-E2-AX	6-HUSON (2x2)	330 pF	4.5 nC	6-WFDFN Exposed Pad	3 A 4 A	N and P-Channel Complementary	20 V	42 mOhm	Surface Mount	2.3 W	150 °C	MOSFET (Metal Oxide)	Logic Level Gate	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources