Discrete Semiconductor Products

RJK03M9DNS-00#J5

Obsolete

MOSFET N-CH 30V 14A 8HWSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 14A 8HWSON

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03M9DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	10 W
Rds On (Max) @ Id, Vgs	11.1 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK03M9DNS-00#J5	30 V	Surface Mount	6 nC	8-HWSON (3.3x3.3)	8-PowerWDFN	980 pF	11.1 mOhm	150 °C	N-Channel	10 W	MOSFET (Metal Oxide)	14 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2000298	$ 0.60

General part information

The RJK03M9DNS is a N Channel Power MOSFET.

Technical documentation and resources