Specification	MCH6353-TL-W

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	6-MCPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

MCH6353 Series

Single P-Channel Power MOSFET -12V, -6.0A, 35 mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Technology	Mounting Type	FET Type
ON Semiconductor MCH6353-TL-W	12 nC	35 mOhm	10 V	6 A	1.5 V 4.5 V	1.4 W	150 °C	1250 pF	6-MCPH	6-SMD Flat Leads	12 V	MOSFET (Metal Oxide)	Surface Mount	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MCH6353 is P-Channel Power MOSFET -12V, -6.0A, 35mΩ, Single MCPH6

Technical documentation and resources