Discrete Semiconductor Products

V3F6-M3/I

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DIODE SCHOTTKY 60V 3A DO219AB

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY 60V 3A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	V3F6-M3/I

Capacitance @ Vr, F	310 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	600 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-219AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Speed	Qualification	Grade
Vishay General Semiconductor - Diodes Division V3F6-M3/H	600 µA	3 A	Surface Mount	150 °C	-40 °C	60 V	Schottky	DO-219AB	310 pF	DO-219AB (SMF)	200 mA 500 ns
Vishay General Semiconductor - Diodes Division V3F6HM3/H	600 µA	3 A	Surface Mount	150 °C	-40 °C	60 V	Schottky	DO-219AB	310 pF	DO-219AB (SMF)	200 mA 500 ns	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division V3F6-M3/I	600 µA	3 A	Surface Mount	150 °C	-40 °C	60 V	Schottky	DO-219AB	310 pF	DO-219AB (SMF)	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 60 V 3A Surface Mount DO-219AB (SMF)

Technical documentation and resources