Specification	FDMQ86530L

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	2295 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-WDFN Exposed Pad
Power - Max [Max]	1.9 W
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	12-MLP
Supplier Device Package [x]	5
Supplier Device Package [y]	4.5
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMQ86530L Series

N-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers 60V, 8A, 17.5mΩ

Part	FET Feature	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMQ86530L	Logic Level Gate	60 V	-55 °C	150 °C	12-WDFN Exposed Pad	5	4.5	12-MLP	1.9 W	4 N-Channel	2295 pF	Surface Mount	MOSFET (Metal Oxide)	33 nC	3 V	17.5 mOhm	8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.

Technical documentation and resources