Discrete Semiconductor Products

UPA2791GR-E1-AT

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SWITCHING N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2791GR-E1-AT

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	8-PSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Switching N-Channel Power MOSFET

Part	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Feature
Renesas Electronics Corporation UPA2791GR-E1-AT	2 W	8-PSOP	10 nC	150 °C	MOSFET (Metal Oxide)	5 A	36 mOhm	30 V	8-SOIC (0.173" 4.40mm Width)	N and P-Channel	Surface Mount	400 pF	2.5 V	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	90000	$ 1.06

General part information

The UPA2791GR is a Switching N-Channel Power MOSFET.

Technical documentation and resources