Discrete Semiconductor Products

UPA2815T1S-E2-AT

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MOSFET P-CH 30V 21A 8HWSON

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Discrete Semiconductor Products

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MOSFET P-CH 30V 21A 8HWSON

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2815T1S-E2-AT

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1760 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Package / Case	FET Type
Renesas Electronics Corporation UPA2815T1S-E2-AT	Surface Mount	4.5 V 10 V	1760 pF	21 A	30 V	1.5 W	150 °C	MOSFET (Metal Oxide)	11 mOhm	8-HWSON (3.3x3.3)	20 V	8-PowerWDFN	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.84
	Digi-Reel®	1	$ 1.84
	N/A	10000	$ 1.47
	Tape & Reel (TR)	5000	$ 0.48
		10000	$ 0.46

General part information

P-Channel 30 V 21A (Tc) 1.5W (Ta) Surface Mount 8-HWSON (3.3x3.3)

Technical documentation and resources