Discrete Semiconductor Products

SISF20DN-T1-GE3

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TRANS MOSFET N-CH 60V 14A 8-PIN POWERPAK 1212-SCD T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 60V 14A 8-PIN POWERPAK 1212-SCD T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SISF20DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	14 A, 52 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	1290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max	5.2 W, 69.4 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	PowerPAK® 1212-8SCD Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SISF20DN-T1-GE3	3 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	14 A 52 A	5.2 W 69.4 W	33 nC	Surface Mount	1290 pF	60 V	PowerPAK® 1212-8SCD Dual	-55 °C	150 °C	13 mOhm

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General part information

Mosfet Array 60V 14A (Ta), 52A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD Dual

Technical documentation and resources