Specification	CSD17579Q3AT

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	998 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	29 W, 3.2 W
Rds On (Max) @ Id, Vgs	10.2 mOhm
Supplier Device Package	8-VSONP (3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.9 V

CSD17579Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.2 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD17579Q5AT	4.5 V 10 V	1030 pF	25 A	Surface Mount	8-PowerTDFN	3.1 W 36 W	30 V	15.1 nC	9.7 mOhm	8-VSONP (5x6)	MOSFET (Metal Oxide)	20 V	N-Channel	-55 °C	150 °C	2 V
Texas Instruments CSD17579Q3A	4.5 V 10 V	998 pF	20 A	Surface Mount	8-PowerVDFN	3.2 W 29 W	30 V		10.2 mOhm	8-VSONP (3x3.3)	MOSFET (Metal Oxide)	20 V	N-Channel	-55 °C	150 °C	1.9 V
Texas Instruments CSD17579Q3AT	4.5 V 10 V	998 pF	20 A	Surface Mount	8-PowerVDFN	3.2 W 29 W	30 V		10.2 mOhm	8-VSONP (3x3.3)	MOSFET (Metal Oxide)	20 V	N-Channel	-55 °C	150 °C	1.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources