IXTQ182N055T
ObsoleteDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)
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IXTQ182N055T
ObsoleteDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTQ182N055T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 182 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 114 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power Dissipation (Max) | 360 W |
| Rds On (Max) @ Id, Vgs | 5 mOhm |
| Supplier Device Package | TO-3P |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IXTQ182N055T Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources