Discrete Semiconductor Products

PSMN3R4-30PL,127

Obsolete

MOSFET N-CH 30V 100A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 100A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R4-30PL,127

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3907 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology
Freescale Semiconductor - NXP PSMN3R4-30PL,127	114 W	Through Hole	TO-220AB	4.5 V 10 V	3907 pF	30 V	2.15 V	N-Channel	100 A	-55 °C	175 ░C	TO-220-3	20 V	64 nC	3.4 mOhm	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP PSMN3R4-30BL,118	114 W	Surface Mount	D2PAK	4.5 V 10 V	3907 pF	30 V	2.15 V	N-Channel	100 A	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	64 nC	3.3 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 100A (Tc) 114W (Tc) Through Hole TO-220AB

Technical documentation and resources