Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TH58NYG2S3HBAI4 |
|---|---|
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Memory Organization | 512 M |
| Memory Size | 512 kB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 63-BGA |
| Supplier Device Package | 63-BGA (9x11) |
| Supplier Device Package [x] | 9 |
| Supplier Device Package [y] | 11 |
| Technology | FLASH - NAND (SLC) |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.7 V |
| Write Cycle Time - Word, Page | 25 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 33 | $ 6.20 | |
| Tray | 1 | $ 4.39 | ||
| 10 | $ 3.97 | |||
| 25 | $ 3.78 | |||
| 210 | $ 3.29 | |||
| 420 | $ 3.25 | |||
Description
General part information
TH58NYG2 Series
FLASH - NAND (SLC) Memory IC 4Gbit Parallel 63-BGA (9x11)
Documents
Technical documentation and resources
No documents available