Discrete Semiconductor Products

SQM40P10-40L_GE3

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MOSFET P-CH 100V 40A TO263

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Discrete Semiconductor Products

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MOSFET P-CH 100V 40A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SQM40P10-40L_GE3

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	134 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5295 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Qualification	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Grade	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SQM40P10-40L_GE3	20 V	5295 pF	40 mOhm	100 V	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	134 nC	150 W	TO-263 (D2PAK)	Automotive	P-Channel	4.5 V 10 V	2.5 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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General part information

P-Channel 100 V 40A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources