Discrete Semiconductor Products

FDH700

Obsolete

DIODE GEN PURP 20V 150MA DO35

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 20V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	FDH700

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	900 ps
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
ON Semiconductor FDH700	175 ░C	-65 C	Any Speed	200 mA	1.5 pF	Axial DO-204AH DO-35	50 nA	DO-204AH (DO-35)	Standard	150 mA	1.25 V	900 ps	20 V	Through Hole
ON Semiconductor FDH700	175 ░C	-65 C	Any Speed	200 mA	1.5 pF	Axial DO-204AH DO-35	50 nA	DO-35	Standard	150 mA	1.25 V	900 ps	20 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 20 V 150mA Through Hole DO-204AH (DO-35)

Technical documentation and resources