Discrete Semiconductor Products

SI7129DN-T1-GE3

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MOSFET P-CH 30V 35A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET P-CH 30V 35A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7129DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	3345 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs	11.4 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Vishay General Semiconductor - Diodes Division SI7129DN-T1-GE3	150 °C	-50 °C	11.4 mOhm	71 nC	PowerPAK® 1212-8	35 A	20 V	MOSFET (Metal Oxide)	PowerPAK® 1212-8	2.8 V	Surface Mount	3345 pF	30 V	4.5 V 10 V	P-Channel

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General part information

P-Channel 30 V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources