Discrete Semiconductor Products

PHM15NQ20T,518

Obsolete

MOSFET N-CH 200V 17.5A 8HVSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 17.5A 8HVSON

Technical Specifications

Parameters and characteristics for this part

Specification	PHM15NQ20T,518

Current - Continuous Drain (Id) (Tc)	17.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	2170 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-VDFN Exposed Pad
Package Length	5 mm
Package Name	8-HVSON
Package Width	6 mm
Power Dissipation (Max)	62.5 W
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Package Length	Package Width	Gate Charge (Max)	Vgs(th) (Max)	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)
NXP USA Inc. PHM15NQ20T,518	2170 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	85 mOhm	17.5 A	8-HVSON	5 mm	6 mm	40 nC	4 V	8-VDFN Exposed Pad	62.5 W	10 V	200 V	Surface Mount	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 17.5A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (5x6)

Technical documentation and resources