Specification	EMX1DXV6T5G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Supplier Device Package	SOT-563
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

EMX1DXV6 Series

Dual NPN Bipolar Transistor

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor EMX1DXV6T5G	Surface Mount	50 V	SOT-563	100 mA	500 mW	180 MHz	-55 °C	150 °C	SOT-563 SOT-666	500 nA	2 NPN (Dual)	120	400 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.38
		10	$ 0.27
	Digi-Reel®	1	$ 0.38
		10	$ 0.27

Description

General part information

EMX1DXV6 Series

This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

Documents

Technical documentation and resources

Datasheet

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing