Discrete Semiconductor Products

CMSN3416K-HF

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MOSFET N-CH 20V 7A SOT23-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 7A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	CMSN3416K-HF

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.1 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Supplier Device Package	FET Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Comchip Technology CMSN3416K-HF	980 pF	1 V	Surface Mount	8.1 nC	18 mOhm	1.3 W	SC-59 SOT-23-3 TO-236-3	SOT-23-3	N-Channel	MOSFET (Metal Oxide)	150 °C	-55 °C	7 A	12 V	20 V	1.8 V	4.5 V

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General part information

N-Channel 20 V 7A (Ta) 1.3W (Ta) Surface Mount SOT-23-3

Technical documentation and resources

No documents available