Discrete Semiconductor Products
RUF015N02TL
ActiveRohm Semiconductor
TRANS MOSFET N-CH 20V 1.5A 3-PIN TUMT T/R
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
RUF015N02TL
ActiveRohm Semiconductor
TRANS MOSFET N-CH 20V 1.5A 3-PIN TUMT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RUF015N02TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TUMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RUF015N02 Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.· Low voltage(1.8V) drive type· Nch Middle-power MOSFET· Fast Switching Speed· Small Surface Mount Package· Pb Free/RoHS Compliant
Documents
Technical documentation and resources