Discrete Semiconductor Products

FQH18N50V2

Obsolete

MOSFET N-CH 500V 20A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 20A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	FQH18N50V2

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	277 W
Rds On (Max) @ Id, Vgs	265 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor FQH18N50V2	30 V	TO-247-3	3290 pF	Through Hole	TO-247	-55 °C	150 °C	N-Channel	500 V	277 W	20 A	55 nC	10 V	MOSFET (Metal Oxide)	5 V	265 mOhm
ON Semiconductor FQH18N50V2	30 V	TO-247-3	3290 pF	Through Hole	TO-247-3	-55 °C	150 °C	N-Channel	500 V	277 W	20 A	55 nC	10 V	MOSFET (Metal Oxide)	5 V	265 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 20A (Tc) 277W (Tc) Through Hole TO-247-3

Technical documentation and resources