Discrete Semiconductor Products

SIA517DJ-T1-GE3

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MOSFET N/P-CH 12V 4.5A SC70-6

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Discrete Semiconductor Products

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MOSFET N/P-CH 12V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA517DJ-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	6.5 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SIA517DJ-T1-GE3	4.5 A	1 V	29 mOhm	PowerPAK® SC-70-6 Dual	-55 °C	150 °C	Logic Level Gate	PowerPAK® SC-70-6 Dual	MOSFET (Metal Oxide)	15 nC	N and P-Channel	500 pF	6.5 W	12 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources