CMS75P06CT-HF

Obsolete

MOSFET P-CH 60V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	CMS75P06CT-HF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	141 nC
Input Capacitance (Ciss) (Max) @ Vds	8620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	183 W, 2 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Comchip Technology CMS75P06CT-HF	-55 °C	150 °C	2 W 183 W	MOSFET (Metal Oxide)	TO-220AB	141 nC	8620 pF	TO-220-3	9.5 mOhm	20 V	P-Channel	2.5 V	Through Hole	75 A	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 75A (Tc) 2W (Ta), 183W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available