Discrete Semiconductor Products

PJMF190N60E1_T0_00001

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600V SUPER JUNCITON MOSFET

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Discrete Semiconductor Products

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600V SUPER JUNCITON MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMF190N60E1_T0_00001

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	ITO-220AB-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)
Panjit International Inc. PJMF190N60E1_T0_00001	MOSFET (Metal Oxide)	10 V	TO-220-3 Full Pack Isolated Tab	4 V	190 mOhm	30 V	150 °C	-55 °C	40 nC	38 W	Through Hole	N-Channel	20 A	ITO-220AB-F	600 V

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General part information

N-Channel 600 V 20A (Tc) 38W (Tc) Through Hole ITO-220AB-F

Technical documentation and resources