
Discrete Semiconductor Products
NVF6P02T3G
NRNDON Semiconductor
SINGLE P-CHANNEL POWER MOSFET -20V, -10A, 50MΩ
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Discrete Semiconductor Products
NVF6P02T3G
NRNDON Semiconductor
SINGLE P-CHANNEL POWER MOSFET -20V, -10A, 50MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVF6P02T3G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | SOT-223 (TO-261) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.77 | |
| 10 | $ 1.13 | |||
| 100 | $ 0.76 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.55 | |||
| 2000 | $ 0.50 | |||
| Digi-Reel® | 1 | $ 1.77 | ||
| 10 | $ 1.13 | |||
| 100 | $ 0.76 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.55 | |||
| 2000 | $ 0.50 | |||
| Tape & Reel (TR) | 4000 | $ 0.47 | ||
| 8000 | $ 0.46 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.48 | |
| 10 | $ 1.00 | |||
| 25 | $ 0.91 | |||
| 50 | $ 0.81 | |||
| 100 | $ 0.71 | |||
| ON Semiconductor | N/A | 1 | $ 0.65 | |
Description
General part information
NVF6P02 Series
Automotive Power MOSFET ideal for low power applications. -20V, -10A, 50 mOhm, Single, P-Channel, SOT-223. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources