Specification	KSB1366GTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150 hFE
Frequency - Transition	9 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220F-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	60 V

KSB1366 Series

PNP Epitaxial Silicon Transistor

Part	Package / Case	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSB1366GTU	TO-220-3 Full Pack	9 MHz	1 V	60 V	Through Hole	PNP	TO-220F-3	100 µA	3 A	2 W	150 °C	150 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources